QUATRON Series
Plasma source

With the QUATRON, HS-Group offers maximum process precision, flexible beam geometries and easy integration into a wide range of systems. The system enables homogeneous, reproducible coatings and operates stably at ion energies from 20 to 1500 eV. The neutral plasma beam prevents substrate charging, making a neutralizer unnecessary. Thanks to its versatile application options in etching, IBS, cleaning, activation and PECVD processes, QUATRON combines scalability, process reliability and maximum system flexibility.

The methods of plasma generation and extraction used and patented by HS-Group GmbH enable the use of plasma technology in a wide range of applications.

Switching our plasma sources to different frequencies such as 13.56 MHz, 27.12 MHz, or 40 MHz is easily possible. Higher frequencies lead to a higher degree of ionization and thus to a higher plasma density, a higher ion current, and higher energy.

Coatings directly "from the source" are possible. For example, in DLC processes, we prepare the C+ atoms in the source and treat the surfaces with defined energy, current, and direction.

The magnetic field coils are axially oriented. This allows the influence of the magnetic field and changes in the beam characteristics (energy, focus). With the magnetic field, the plasma can be adjusted to various process conditions such as chamber pressure.

Further special features of our QUATRON plasma sources:

  • Neutral and parallel beam (no static charging of the substrate)
  • Extraction grid - the only wear part
  • Ion energy in the beam exactly adjustable: 20 ... ~2000 eV
  • Beam current strength: up to ~6 mA/cm²
  • Typical operating/pressure range: 1*10^-4 ... 5*10^-3 mbar
  • Very monochromatic energy distribution in the respective pressure range
  • Plasma operation with multiple gases simultaneously with first contact (mixing) in the plasma source

With our capacitively coupled plasma sources, both CVD processes and plasma-assisted processes in common PVD methods are possible. The energy range typically extends from 20 eV up to 2000 eV and higher.

Optimal frequency for every process

Operation at 13.56 MHz, 27.12 MHz or 40 MHz for optimal ionization and plasma density

 Axial magnetic field control

Variable beam characteristics (energy, focus) for process-specific adjustment

Energy-controllable ion technology

Variable ion generation directly in the source for maximum process stability and reproducibility

Robust, versatile, and high-energy

Capacitively coupled sources for etching, CVD and PVD processes with a wide gas and energy range

QUATRON-L

Linear, scalable plasma beam source for use in various coating systems. The beam length is defined by the substrate dimensions, while the beam width (short side) is 100 mm. Custom adaptations are available on request.

Single-layer, cost-efficient extraction grid. Material (tungsten, molybdenum, titanium, stainless steel, etc.) depending on the process.

Linear scalable plasma beam source

  • QUATRON-L with adjustable beam length for integration into a wide variety of coating systems

Cost-efficient extraction grid

  • Single-layer extraction grid made of tungsten, molybdenum, titanium, stainless steel, etc.; selection depends on the process

Design according to substrate geometry

  • Beam source design aligned with substrate dimensions for maximum coating precision

QUATRON-R

Round plasma beam source for multifunctional use in various system types. The source design is highly scalable and can be adapted to the hardware. It is also the most favorable shape from a physical and mechanical perspective.

The QUATRON-R can be used for etching, coating, supporting vapor deposition coatings or magnetron coatings, and the generation of oxide layers.

Round, customizable plasma beam source

  • Mechanically advantageous design for flexible integration into various system types

Wide range of applications

  • Suitable for etching processes, PVD assist, IBS, oxide layer formation and direct coatings (e.g. DLC)

Process stability at high ion energy

  • 20–1500 eV, neutral and parallel beam without static charging. High current densities are possible depending on the energy.

Multigas operation with first contact in the plasma

  • All process gases can be used; mixing takes place inside the source for maximum reactivity
CONTACT
07.05.2026 - 09.05.2026
TiExpo 2026

Shanghai, China

National Exhibition and Convention Center

A006

05.07.2026 - 10.07.2026
SPIE Astronomical Telescopes + Instrumentation 2026

Copenhagen, Denmark

02.09.2026 - 04.09.2026
Semicon Taiwan 2026

Taipeh, Taiwan

Silicon Saxony Pavilion

13.10.2026 - 15.10.2026
Semicon West 2026

San Francisco, CA, USA

Moscone Center

North Hall | Booth 5373

Sales Team HS-Group GmbH
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